For research use only. Not for therapeutic Use.
<span style="color:#000000;"><span style="font-family:arial,helvetica,sans-serif;"><span style="font-size:12px;">TRIETHYLGALLIUM (CAS 1115-99-7) is a metalorganic source of gallium for metalorganic vapour phase epitaxy (MOVPE) of compound semiconductors.</span></span></span>
| Catalog Number | M048200 |
| CAS Number | 1115-99-7 |
| Molecular Formula | C6H15Ga |
| Purity | ≥95% |
| Storage | Desiccate at +4C |
| IUPAC Name | triethylgallane |
| InChI | InChI=1S/3C2H5.Ga/c3*1-2;/h3*1H2,2H3; |
| InChIKey | RGGPNXQUMRMPRA-UHFFFAOYSA-N |
| SMILES | CC[Ga](CC)CC |
| Reference | <span style="color:#000000;"><span style="font-family:arial,helvetica,sans-serif;"><span style="font-size:12px;">1.Hiroki, Masanobu, et al. "Unintentional Ga incorporation in metalorganic vapor phase epitaxy of In-containing III-nitride semiconductors." <i style="font-family: Arial, sans-serif; font-size: 13px;">Journal of crystal growth</i> 382 (2013): 36-40.<br /> |
